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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS

30

mosfet

This is a N-channel enhancement mode vertical DMOS FET with a maximum drain-source voltage of 100V and low threshold voltage, designed for high current applications.

In stock

Specifications

5
Operating Voltage
100V
Package
TO92 Compatible
RDS(On)
3.0-4.5 Ω
ID(On)
750 mA
VGS(Th)
0.75-1.5 V

Pinout

3
PinNameFunctionsNotes
GGate
GPIO
Controls the on-state resistance
SSource
POWER
Connected to the load or ground
DDrain
POWER
Connected to the supply voltage

Interactive pinout

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