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NPN Si Power Transistor

MJE13005

transistor

The MJE13005G is a high-power NPN silicon power transistor designed for switching and amplification applications.

In stock

Specifications

2
Operating Voltage
2V to 5V DC, Collector-Emitter voltage up to 400V, Base-Emitter voltage up to 6.5V DC at room temperature. Volts
Package
TO-3P

Pinout

3
PinNameFunctionsNotes
1Collector (C)
POWER
Output terminal
2Base (B)
GPIO
Control input
3Emitter (E)
GND
Input ground

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