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Phototransistor
Phototransistor
optoelectronic
A silicon NPN phototransistor with a spectral range of sensitivity from 450 to 1100 nm, used in electronic equipment and industrial automation.
In stock
Specifications
19- Operating Temperature Range
- -40 °C to 100 °C
- Collector Emitter Voltage Max
- 35 V
- Collector Current Max
- 50 mA
- Collector Surge Current Max
- 100 mA
- Emitter Collector Voltage Max
- 7 V
- Total Power Dissipation Max
- 200 mW
- Wavelength Of Max Sensitivity Typical
- 880 nm
- Spectral Range Of Sensitivity Typical
- 450 ... 1100 nm
- Chip Dimensions Typical
- 0.55 x 0.55 mm x mm
- Radiant Sensitive Area Typical
- 0.11 mm²
- Half Angle Typical
- 25 °
- Photocurrent Vce 5v Lambda 950nm Ee 0.5mwcm2 Typical
- 4800 µA
- Dark Current Vce 20v E 0 Typical Min
- 1 nA
- Dark Current Vce 20v E 0 Typical Max
- 50 nA
- Rise Time Ic 1ma Vcc 5v Rl 1kohm Typical
- 10 µs
- Fall Time Ic 1ma Vcc 5v Rl 1kohm Typical
- 10 µs
- Collector Emitter Saturation Voltage Ic Ipcemin X 03 Ee 05mwcm2 Typical
- 140 mV
- Collector Emitter Capacitance Vce 0v F 1mhz E 0 Typical
- 7.5 pF
- Thermal Resistance Junction Ambient Max
- 380 K / W
Pinout
2Low source legibility.The original manufacturer datasheet for this part was difficult to read, so this pinout may be incomplete or imperfect. Always confirm against the specific manufacturer’s datasheet before wiring.
| Pin | Name | Functions | Notes |
|---|---|---|---|
| C | Collector | GPIO | Collector |
| E | Emitter | GPIO | Emitter |
Interactive pinout
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Phototransistor
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